Personnel information

Full name: Dr. Ha Minh Tan

Position: Lecturer

Belongs to the unit: Department of Materials Engineering

Email address: tan.haminh@hust.edu.vn

Scientific background


INTRODUCTION

Dr. Hà Minh Tân is a lecturer in the Faculty of Materials Engineering at the School of Materials Science and Engineering (SMSE), Hanoi University of Science and Technology. He earned his Bachelor's degree in Materials Science and Engineering from Hanoi University of Science and Technology in 2012, followed by a Master's degree in the same field from the International Training Institute for Materials Science (ITIMS) at the same university in 2014. In 2019, he completed his PhD in Materials Engineering at Gyeongsang National University in South Korea. His research areas include single crystal growth, semiconductor thin film fabrication, semiconductor-electronic devices, numerical simulations of technological processes, as well as modeling and artificial intelligence applications in engineering.


TEACHING COURSES

  • Materials Processing
  • Numerical Simulation in Casting Engineering
  • Solidification Processes
  • Design of Engineering Alloys
  • Materials Design
  • Nanostructured Materials
  • Data Analysis and Experimental Design


RESEARCH INTERESTS

  • Single Crystal Growth
  • Fabrication of Semiconductor Thin Films and Semiconductor-Electronic Devices
  • Gas Sensors, Photodetectors
  • Numerical Simulation of Technological Processes
  • Modeling and Application of Artificial Intelligence in Engineering


TYPICAL SCIENTIFIC WORKS

Typical scientific research projects:
  • Ministry of Education and Training project code B2024-BKA-22: "Research on the fabrication of gallium oxide crystal thin film materials and experimental application as deep ultraviolet sensors," implemented from January 2024, project leader, currently in progress
Typical articles:
  • Hà Minh Tân, S.-M. Jeong, A review of the simulation studies on the bulk growth of silicon carbide single crystals. J. Korean Ceram. Soc. 59, 153–179 (2022). [DOI: 10.1007/s43207-022-00188-y].
  • S-Y. Park, Hà Minh Tân, K.-H. Kim, L. Van Lich, Y.-J. Shin, S.-M. Jeong, S.-H. Kwon, S.-Y. Bae, Enhanced thickness uniformity of large-scale α-Ga2O3 epilayers grown by vertical hot-wall mist chemical vapor deposition. Ceram. Int. S0272884221034532 (2021). [DOI: 10.1016/j.ceramint.2021.11.045].
  • K-H. Kim, Hà Minh Tân, H. Lee, M. Kim, O. Nam, Y.-J. Shin, S.-M. Jeong, S.-Y. Bae, Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition. Materials 15, 1050 (2022). [DOI: 10.3390/ma15031050].
  • Van Lich, M.-T. Le, N.-L. Vu, H.-D. Nguyen, V.-T. Le, Hà Minh Tân, T.-G. Nguyen, V.-H. Dinh, Direct switching of polarization vortex in triangular ferroelectric nanodots: Role of crystal orientation. Phys. Rev. B 104, 024104 (2021). [DOI: 10.1103/PhysRevB.104.024104].
  • Hà Minh Tân, K. Kim, Y. Shin, S. Jeong, S. Bae, Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition. Adv. Mater. Interfaces 8, 2001895 (2021). [DOI: 10.1002/admi.202001895].
  • Le Van Lich, N.-L. Vu, Hà Minh Tân, T.Q. Bui, V.-T. Le, T.-G. Nguyen, V.-H. Dinh, Enhancement of electrocaloric effect in compositionally graded ferroelectric nanowires. J. Appl. Phys. 127, 214103 (2020). [DOI: 10.1063/1.5145040].
  • Hà Minh Tân, L.V. Lich, Y.-J. Shin, S.-Y. Bae, M.-H. Lee, S.-M. Jeong, Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation. Materials 13, 651 (2020). [DOI: 10.3390/ma13030651].
  • Hà Minh Tân, K.-H. Kim, Y.-J. Kwon, C.-J. Kim, S.-M. Jeong, S.-Y. Bae, Understanding Thickness Uniformity of Ga2O3 Thin Films Grown by Mist Chemical Vapor Deposition. ECS J. Solid State Sci. Technol. 8, Q3206–Q3212 (2019). [DOI: 10.1149/2.0381907jss].
  • K-H. Kim, Hà Minh Tân, Y.-J. Kwon, H. Lee, S.-M. Jeong, S.-Y. Bae, Growth of 2-Inch α-Ga2O3 Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition. ECS J. Solid State Sci. Technol. 8, Q3165–Q3170 (2019). [DOI: 10.1149/2.0301907jss].
  • S-Y. Park, Y.-J. Shin, Hà Minh Tân, S.-Y. Bae, Y.-S. Lim, S.-M. Jeong, Effect of Radiation Heat Transfer on the Control of Temperature Gradient in the Induction Heating Furnace for Growing Single Crystals. J. Korean Inst. Electr. Electron. Mater. Eng. 32, 522–527 (2019). [DOI: 10.4313/JKEM.2019.32.6.522].
  • Hà Minh Tân, Y.-J. Shin, S.-Y. Bae, Y.-J. Yoo, S.-M. Jeong, Effect of Residual Droplet on the Solution-Grown SiC Single Crystals. J. Korean Inst. Electr. Electron. Mater. Eng. 32, 516–521 (2019). [DOI: 10.4313/JKEM.2019.32.6.516].
  • Hà Minh Tân, Y.-J. Shin, S.-Y. Bae, S.-Y. Park, S.-M. Jeong, Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method. J. Korean Ceram. Soc. 56, 589–595 (2019). [DOI: 10.4191/kcers.2019.56.6.07].
  • Hà Minh Tân, Y.-J. Yu, Y.-J. Shin, S.-Y. Bae, M.-H. Lee, C.-J. Kim, S.-M. Jeong, Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals. RSC Adv. 9, 26327–26337 (2019). [DOI: 10.1039/C9RA04930D].
  • Hà Minh Tân, Y.-J. Shin, M.-H. Lee, C.-J. Kim, S.-M. Jeong, Effects of the Temperature Gradient Near the Crystal-Melt Interface in Top Seeded Solution Growth of SiC Crystal. Phys. Status Solidi A 215, 1701017 (2018). [DOI: 10.1002/pssa.201701017].
  • Hà Minh Tân, C. Manh Hung, T.M. Ngoc, H. Nguyen, N. Duc Hoa, N. Van Duy, N.V. Hieu, Novel Self-Heated Gas Sensors Using on-Chip Networked Nanowires with Ultralow Power Consumption. ACS Appl. Mater. Interfaces 9, 6153–6162 (2017). [DOI: 10.1021/acsami.6b14516].
  • J. E. Lee, B.G. Kim, J.-Y. Yoon, Hà Minh Tân, M.-H. Lee, Y. Kim, W.-S. Seo, H.-J. Choi, W.-J. Lee, S.-M. Jeong, The role of an SiC interlayer at a graphite–silicon liquid interface in the solution growth of SiC crystals. Ceram. Int. 42, 11611–11618 (2016). [DOI: 10.1016/j.ceramint.2016.04.060].
  • D.T.T. Le, N. Van Duy, Hà Minh Tân, D.D. Trung, N.N. Trung, P.T.H. Van, N.D. Hoa, N. Van Hieu, Density-controllable growth of SnO2 nanowire junction-bridging across electrode for low-temperature NO2 gas detection. J. Mater. Sci. 48, 7253–7259 (2013). [DOI: 10.1007/s10853-013-7545-9].
 

PUBLISHED BOOKS

  • None


OTHER INFORMATION

Patent:
  1. Jeong Seong Min, Lee Myung Huyn, Shin Yun Ji, Hà Minh Tân, The solution growth reactor for single crystal growth including that function for opening and closing the head of hot-zone, issued by Korean Intellectual Property Office, on May 03, 2019, Registration number: 1019773650000
  2. Jeong Seong Min, Lee Myung Huyn, Kim Young Hee, Hà Minh Tân, Constructional element lies inside the crucible for enhancing the growth rate of single crystal in solution growth, issued by Korean Intellectual Property Office, on Apirl 02, 2019, Registration number: 1019666960000
  3. Jeong Seong Min, Lee Myung Huyn, Bae Si Young, Shin Yun Ji, Yu Yeong Jae, Hà Minh Tân, Single Crystal Growth Apparatus, issued by Korean Intellectual Property Office, on October 31, 2019, Registration number: 1020413700000

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