Họ tên: PGS. TS. Nguyễn Văn Duy
Chức vụ: Giảng viên cao cấp
Thuộc đơn vị: Khoa Vật Liệu Điện Tử và Linh Kiện
Địa chỉ email: duy.nguyenvan@hust.edu.vn
Nhóm chuyên môn: 1- Công nghệ chế tạo linh kiện Vi điện tử; 2- Kỹ thuật Vi điện tử cơ sở; 3- Thiết kế, lập trình và mô phỏng Vi điện tử
PGS. TS. Nguyễn Văn Duy hiện là giảng viên cao cấp Khoa Vật liệu điện tử và linh kiện, Trường Vật liệu, Đại học Bách Khoa Hà Nội. PGS. TS. Nguyễn Văn Duy đã tốt nghiệp chuyên ngành Vật Lý Kĩ Thuật, Đại học Bách Khoa Hà Nội năm 2003; nhận bằng Thạc sỹ chuyên ngành Khoa học vật liệu, Viện ITIMS – Đại học Bách Khoa Hà Nội năm 2008; hoàn thành Luận án Tiến sỹ chuyên ngành Kĩ thuật điện và điện tử, Đại học Sungkyunkwan – Hàn Quốc năm 2011. Các hướng nghiên cứu hiện nay của PGS. TS. Nguyễn Văn Duy bao gồm: Vật liệu lai giữa ống nano carbon và oxit kim loại bán dẫn ứng dụng cho cảm biến khí; Linh kiện điện tử dạng màng mỏng; Vật liệu điện môi mới.
Đang cập nhật
[2] Nguyen Van Duy, Sungwook Jung, Nguyen Thanh Nga, Dang Ngoc Son, Jaehyun Cho, Sunhwa Lee, Wonbaek Lee, Junsin Yi, The investigation of an amorphous SiOx system for charge storage applications in nonvolatile memory at low temperature process, Materials Science and Engineering B, 175 (2010) 176.
[3] Nguyen Van Duy, Wonbaek Lee, Sungwook Jung, Nguyen Thanh Nga, Dang Ngoc Son, Kwangryul Kim, Byoungdeog Choi, and Junsin Yi, Investigation of Aluminum Metallized Source/Drain Thin Film Transistors Using a Self-Aligned Fabrication Process, Japanese Journal of Applied Physics, 49 (2010) 096502.
[4] Nguyen Van Duy, Nariangadu Lakshminarayan, Sungwook Jung, Nguyen Thanh Nga, Dang Ngoc Son, Wonbaek Lee, Junsin Yi, A novel fabrication process of a gate offset nonvolatile memory on glass and the influence of the gate offset structure on the device characteristics, Solid-State Electronics, 55 (2011) 8.
[5] Nguyen Van Duy, Kyunghyun Baek, Dang Ngoc Son, Wonbaek Lee, Kwangryul Kim, Byoungdeog Choi, Hokyun Chung, and Junsin Yi, Effect of Series Resistance on Field-Effect Mobility at Varying Channel Lengths and Investigation into the Enhancement of Source/Drain Metallized Thin-Film Transistor Characteristics, Japanese Journal of Applied Physics, 50 (2011) 024101.
[6] Thanh Nga Nguyen, Sungwook Jung, Van Duy Nguyen, and Junsin Yi, Memory characteristics of poly-Si using MIC as an active layer on glass substrates, J. Phys. D: Appl. Phys., 43 (2010) 105406.
[7] Thanh Nga Nguyen, Van Duy Nguyen, Sungwook Jung, Junsin Yi, The metal-induced crystallization of poly-Si and the mobility enhancement of thin film transistors fabricated on a glass substrate, Microelectronic Engineering, 87 (2010) 2163.
[8] Dang Ngoc Son, Nguyen Van Duy, Sungwook Jung, and Junsin Yi, Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications, Semicond. Sci. Technol., 25 (2010) 085003.
[9] Kyungsoo Jang, Hyeongsik Park, Sungwook Jung, Nguyen Van Duy, Youngkuk Kim, Jaehyun Cho, Hyungwook Choi, Taeyoung Kwon, Wonbaek Lee, Daeyeong Gong, Seungman Park, Junsin Yi, Doyoung Kim, Hyungjun Kim, Optical and electrical properties of 2 wt.% Al2O3-doped ZnO films and characteristics of Al-doped ZnO thin-film transistors with ultra-thin gate insulators, Thin Solid Films, 518 (2010) 2808.
[10] Thanh Nga Nguyen, Van Duy Nguyen, Sungwook Jung, Junsin Yi, Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel, Applied Surface Science, 255 (2009) 8252.
[11] Vinh Ai Dao, Nguyen Van Duy, Jongkyu Heo, Hyungwook Choi, Youngkuk Kim, Lakshminarayan1, and Junsin Yi, Hydrogenated Amorphous Silicon Layer Formation by Inductively Coupled Plasma Chemical Vapor Deposition and Its Application for Surface Passivation of p-Type Crystalline Silicon, Japanese Journal of Applied Physics, 48 (2009) 066509.
[12] Vinh-Ai Dao, Van Duy Nguyen, Jongkyu Heo, Hyungwook Choi, Youngkuk Kim, Nariangadu Lakshminarayan, Junsin Yi, Effect of N2O/SiH4 flow ratios on properties of amorphous silicon oxide thin films deposited by inductively-coupled plasma chemical vapor deposition with application to silicon surface passivation, Vacuum 84 (2010) 410.
[13] Vinh Ai Dao, Kyunghae Kim, Youngkuk Kim, Duy Nguyen Van, Zhenghai Jin and Junsin Yi, Effect of Defect Densities and Band Offsets on Carrier Transport Mechanisms in Mixed phase Silicon/Crystalline Silicon Heterojunction, Journal of the Korean Physical Society, 53 (2008) 704.
[14] Nguyen Van Hieu, Nguyen Van Duy, Pham Thanh Huy, Nguyen Duc Chien, Inclusion of SWCNTs in Nb/Pt co-doped TiO2 thin-film sensor for ethanol vapor detection, Physica E: Low-dimensional Systems and Nanostructures, 40 (2008) 2950.
[15] Zhenghai Jin, Sungwook Jung, Nguyen Van Duy, Sunghyun Hwang, Kyungsoo Jang, Kwangsoo Lee, Jungin Lee, Park Hyungjun, Jaehon Kim, Hyukjoo Son, Junsin Yi, Characterization of MONOS nonvolatile memory by solid phase crystallization on glass, Surface & Coatings Technology 202 (2008) 5637.
[16] Nguyen Van Duy, Nguyen Van Hieu, Pham Thanh Huy, Nguyen Duc Chien, M. Thamilselvan, Junsin Yi, Mixed SnO2/TiO2 included with carbon nanotubes for gas-sensing application, Physica E: Low-dimensional Systems and Nanostructures, 41 (2008) 258.
[17] Hong Hanh Nguyen, Van Duy Nguyen, Thanh Thuy Trinh, Kyungsoo Jang,Kyunghyun Baek, Jayapal Raja, and Junsin Yi, Fabrication of SiO2/SiOx/SiOxNy Non-Volatile Memory with Transparent Amorphous Indium Gallium Zinc Oxide Channels, J. Electrochem. Soc., 158 (2011) H1077-H1083.
[18] Thanh Thuy Trinh, Van Duy Nguyen, Kyungyul Ryu, Kyungsoo Jang, Wonbeak Lee, Seungshin Baek, Jayapal Raja and Junsin Yi, Improvement in the performance of an InGaZnO thin-film transistor by controlling interface trap densities between the insulator and active layer, Semicond. Sci. Technol., 26 (2011) 085012.
[19] Thanh Thuy Trinh, Van Duy Nguyen, Hong Hanh Nguyen, Jayapal Raja, Juyeon Jang, Vinh Ai Dao, and Junsin Yi, Operation Mechanism of Schottky Barrier Nonvolatile Memory with High Conductivity InGaZnO Active Layer, Appl. Phys. Lett., 100 (2012) 143502.